Invention Grant
US08193616B2 Semiconductor device on direct silicon bonded substrate with different layer thickness
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在具有不同层厚度的直接硅键合衬底上的半导体器件
- Patent Title: Semiconductor device on direct silicon bonded substrate with different layer thickness
- Patent Title (中): 在具有不同层厚度的直接硅键合衬底上的半导体器件
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Application No.: US12493469Application Date: 2009-06-29
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Publication No.: US08193616B2Publication Date: 2012-06-05
- Inventor: Masafumi Hamaguchi , Ryoji Hasumi
- Applicant: Masafumi Hamaguchi , Ryoji Hasumi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A Direct Silicon Bonded substrate can include a first substrate and a second substrate in which the second substrate can be rotated to an azimuthal twist angle of 45 degrees in comparison to the first substrate. Disclosed are a semiconductor device and a method for making a semiconductor device that includes a DSB substrate with an adjusted thickness based upon the threshold voltage (Vt). In other words, a thicker substrate or layer can correspond to a high threshold voltage (HVt) and a thinner substrate or layer can correspond to a low threshold voltage (LVt) in order to improve mobility in LVt devices.
Public/Granted literature
- US20100327395A1 SEMICONDUCTOR DEVICE ON DIRECT SILICON BONDED SUBSTRATE WITH DIFFERENT LAYER THICKNESS Public/Granted day:2010-12-30
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