Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12476454Application Date: 2009-06-02
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Publication No.: US08193617B2Publication Date: 2012-06-05
- Inventor: Takaharu Yamano
- Applicant: Takaharu Yamano
- Applicant Address: JP Nagano-shi, Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi, Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2008-148592 20080605; JP2008-211642 20080820; JP2008-315512 20081211
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
There is provided a semiconductor device including a semiconductor substrate on which a plurality of semiconductor chips having electrode pads is formed, an internal connection terminal provided on each of the electrode pads, an insulating layer provided to cover the plurality of semiconductor chips and the internal connection terminals, and a wiring pattern connected to the internal connection terminals across the insulating layer. This semiconductor device is characterized in that the insulating layer is configured to contain an alpha ray blocking material including polyimide and/or a polyimide-based compound.
Public/Granted literature
- US20090302471A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-12-10
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