Invention Grant
US08193617B2 Semiconductor device and manufacturing method therefor 有权
半导体装置及其制造方法

Semiconductor device and manufacturing method therefor
Abstract:
There is provided a semiconductor device including a semiconductor substrate on which a plurality of semiconductor chips having electrode pads is formed, an internal connection terminal provided on each of the electrode pads, an insulating layer provided to cover the plurality of semiconductor chips and the internal connection terminals, and a wiring pattern connected to the internal connection terminals across the insulating layer. This semiconductor device is characterized in that the insulating layer is configured to contain an alpha ray blocking material including polyimide and/or a polyimide-based compound.
Public/Granted literature
Information query
Patent Agency Ranking
0/0