Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13167296Application Date: 2011-06-23
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Publication No.: US08193621B2Publication Date: 2012-06-05
- Inventor: Yoshiaki Goto
- Applicant: Yoshiaki Goto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-159942 20070618
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device includes a lead frame including inner lead portion having inner leads connected to outer leads and relay inner leads not connected to the outer leads. A semiconductor element is mounted on a lower surface of the lead frame. Electrode pads of the semiconductor element are connected to the inner lead portion via metal wire. One end of the relay inner lead is connected to the electrode pad via the metal wire, and the other end is connected to the outer lead via a relay metal wire disposed to step over the inner lead.
Public/Granted literature
- US20110248395A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-10-13
Information query
IPC分类:
