Invention Grant
- Patent Title: Bonding structure for a terminal of a susceptor of a semiconductor device manufacturing apparatus
- Patent Title (中): 半导体器件制造装置的基座的端子的接合结构
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Application No.: US12350314Application Date: 2009-01-08
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Publication No.: US08193629B2Publication Date: 2012-06-05
- Inventor: Hiroshi Takebayashi , Taichi Nakamura , Tomoyuki Fujii
- Applicant: Hiroshi Takebayashi , Taichi Nakamura , Tomoyuki Fujii
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2008-001367 20080108
- Main IPC: B32B3/00
- IPC: B32B3/00
Abstract:
A bonding structure including: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisting of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.
Public/Granted literature
- US20090176065A1 BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS Public/Granted day:2009-07-09
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