Invention Grant
- Patent Title: Interlayer insulating film, interconnection structure, and methods of manufacturing the same
- Patent Title (中): 层间绝缘膜，互连结构及其制造方法
-
Application No.: US11922476Application Date: 2006-06-20
-
Publication No.: US08193642B2Publication Date: 2012-06-05
- Inventor: Tadahiro Ohmi
- Applicant: Tadahiro Ohmi
- Applicant Address: JP Sendai-Shi JP Tsukuba-Shi
- Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee Address: JP Sendai-Shi JP Tsukuba-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2005-179591 20050620
- International Application: PCT/JP2006/312292 WO 20060620
- International Announcement: WO2006/137384 WO 20061228
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/4763
Abstract:
This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.
Public/Granted literature
- US20090108413A1 Interlayer Insulating Film, Interconnection Structure, and Methods of Manufacturing the Same Public/Granted day:2009-04-30
Information query
IPC分类:
