Invention Grant
US08193646B2 Semiconductor component having through wire interconnect (TWI) with compressed wire
有权
具有通过电线互连(TWI)与压缩线的半导体部件
- Patent Title: Semiconductor component having through wire interconnect (TWI) with compressed wire
- Patent Title (中): 具有通过电线互连(TWI)与压缩线的半导体部件
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Application No.: US12824487Application Date: 2010-06-28
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Publication No.: US08193646B2Publication Date: 2012-06-05
- Inventor: Alan G. Wood , David R. Hembree
- Applicant: Alan G. Wood , David R. Hembree
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agent Stephen A. Gratton
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.
Public/Granted literature
- US20100264521A1 Semiconductor Component Having Through Wire Interconnect (TWI) With Compressed Wire Public/Granted day:2010-10-21
Information query
IPC分类: