Invention Grant
- Patent Title: Semiconductor integrated circuit for monitoring characteristics of a semiconductor chip
- Patent Title (中): 用于监测半导体芯片特性的半导体集成电路
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Application No.: US12886685Application Date: 2010-09-21
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Publication No.: US08193833B2Publication Date: 2012-06-05
- Inventor: Takashi Inukai
- Applicant: Takashi Inukai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2010-28117 20100210
- Main IPC: H03K19/20
- IPC: H03K19/20 ; H03K19/094 ; H03K3/00 ; H03B1/00

Abstract:
Provided is a semiconductor integrated circuit that includes a monitoring circuit for monitoring characteristics of a semiconductor chip. The semiconductor integrated circuit comprises a first terminal with a first voltage and a second terminal with a second voltage. The semiconductor integrated circuit also comprises an inverter chain circuit comprising a plurality of inverters connected in cascade. Each of the plurality of inverters includes a first transistor and a second transistor. The first transistors included in the inverters located at either odd-number orders or even-number orders counted from an input terminal side of an inverter chain circuit function as pre-charge transistors. The pre-charge transistors have a conductivity type different from a conductivity type of the first transistors other then the pre-charge transistors.
Public/Granted literature
- US20110193594A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-08-11
Information query
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