Invention Grant
- Patent Title: Bi-directional trimming methods and circuits for a precise band-gap reference
- Patent Title (中): 用于精确带隙参考的双向修整方法和电路
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Application No.: US12651993Application Date: 2010-01-04
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Publication No.: US08193854B2Publication Date: 2012-06-05
- Inventor: Xiao Fei Kuang , Kam Chuen Wan , Kwai Chi Chan , Yat To (William) Wong , Kwok Kuen (David) Kwong
- Applicant: Xiao Fei Kuang , Kam Chuen Wan , Kwai Chi Chan , Yat To (William) Wong , Kwok Kuen (David) Kwong
- Applicant Address: HK Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Company, Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company, Ltd.
- Current Assignee Address: HK Hong Kong
- Agency: g Patent LLC
- Agent Stuart T Auvinen
- Main IPC: G05F3/02
- IPC: G05F3/02

Abstract:
A bandgap reference circuit has trimming-up resistors and trimming-down resistors for bi-directional trimming. PNP transistors have base and collectors grounded and emitters connected to parallel resistors. A difference resistor drives an inverting input of an op amp that drives a transistor that generates the bandgap reference voltage Vbg. A sensing resistor connects Vbg to a splitting node that connects to the non-inverting input through a first parallel resistor. The splitting node also connects through a second parallel resistor to the inverting input. Fuses or switches enable the trimming-up and trimming-down resistors. The trimming-up resistors are in series with the sensing resistor and the trimming-down resistors are in series with an output resistor that connects Vbg to reference voltage Vref. The circuit can be designed for a more typical process since bi-directional trimming allows Vref to be raised or lowered. Many circuits need no trimming when targeted for the typical process.
Public/Granted literature
- US20110163799A1 Bi-directional Trimming Methods and Circuits for a Precise Band-Gap Reference Public/Granted day:2011-07-07
Information query
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