Invention Grant
- Patent Title: Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors
- Patent Title (中): 用于xMR磁阻传感器的电流分布结构的有益修改的集成横向短路
-
Application No.: US13004769Application Date: 2011-01-11
-
Publication No.: US08193897B2Publication Date: 2012-06-05
- Inventor: Juergen Zimmer , Thomas Bever
- Applicant: Juergen Zimmer , Thomas Bever
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01C10/00
- IPC: H01C10/00

Abstract:
The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
Public/Granted literature
Information query