Invention Grant
US08194362B2 Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head
有权
包括在基板上依次层叠的氮化物底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁性层的磁阻效应器件，以及包括同一磁阻效应器件的磁头以及包括该磁阻效应器件的信息存储设备 相同的磁头
- Patent Title: Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head
- Patent Title (中): 包括在基板上依次层叠的氮化物底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁性层的磁阻效应器件，以及包括同一磁阻效应器件的磁头以及包括该磁阻效应器件的信息存储设备 相同的磁头
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Application No.: US12842447Application Date: 2010-07-23
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Publication No.: US08194362B2Publication Date: 2012-06-05
- Inventor: Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
- Applicant: Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Greer, Burns & Crain, Ltd.
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
Public/Granted literature
- US20100284103A1 MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS Public/Granted day:2010-11-11
Information query
IPC分类:
