Invention Grant
- Patent Title: TMR read head structures with differential stripe heights
- Patent Title (中): TMR读取具有差分条纹高度的头结构
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Application No.: US12579315Application Date: 2009-10-14
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Publication No.: US08194366B1Publication Date: 2012-06-05
- Inventor: Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
- Applicant: Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.
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