A method of and system for controlling the inrush current generated in a MOSFET of an inrush current control system, wherein the MOSFET includes a source, gate and drain. The dV/dt at the drain of the MOSFET is controlled so as to set the inrush current level as a function of dV/dt, independent of current limit without requiring a separate capacitor connected between the gate and drain of the MOSFET so that the MOSFET can turn on and off more quickly.