Invention Grant
- Patent Title: Memory Device
- Patent Title (中): 存储设备
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Application No.: US12633797Application Date: 2009-12-09
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Publication No.: US08194435B2Publication Date: 2012-06-05
- Inventor: Yen-Wei Hsu , Whei-Chyou Wu
- Applicant: Yen-Wei Hsu , Whei-Chyou Wu
- Applicant Address: TW Taipei US CA Fremont
- Assignee: Yen-Wei Hsu,Whei Chyou Wu
- Current Assignee: Yen-Wei Hsu,Whei Chyou Wu
- Current Assignee Address: TW Taipei US CA Fremont
- Main IPC: G11C11/24
- IPC: G11C11/24
Abstract:
This invention relates to a high-speed volatile and non-volatile memory assemblies. And, an inventive FET and capacitor are also revealed and introduced into the memory assembly to enhance its performance. Further, the memory assembly has physical addressing capability with CPU so that operating system stored in the memory assembly can be quickly booted.
Public/Granted literature
- US20110134579A1 Memory Device Public/Granted day:2011-06-09
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