Invention Grant
- Patent Title: nvSRAM having variable magnetic resistors
- Patent Title (中): nvSRAM具有可变磁阻
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Application No.: US12370164Application Date: 2009-02-12
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Publication No.: US08194438B2Publication Date: 2012-06-05
- Inventor: Yongchul Ahn , Antoine Khoueir , Yong Lu , Hongyue Liu
- Applicant: Yongchul Ahn , Antoine Khoueir , Yong Lu , Hongyue Liu
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raash & Gebhardt PA
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Non-volatile static random access memory (nvSRAM) that has a six transistor static random access memory (6T SRAM) cell electrically connected to a non-volatile random access memory (nvRAM) cell. The nvRAM cell has first and second variable magnetic resistors and first, second and third transistors.
Public/Granted literature
- US20100202191A1 nvSRAM HAVING VARIABLE MAGNETIC RESISTORS Public/Granted day:2010-08-12
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