Invention Grant
US08194441B2 Phase change memory state determination using threshold edge detection
有权
使用阈值边缘检测的相变存储器状态确定
- Patent Title: Phase change memory state determination using threshold edge detection
- Patent Title (中): 使用阈值边缘检测的相变存储器状态确定
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Application No.: US12889372Application Date: 2010-09-23
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Publication No.: US08194441B2Publication Date: 2012-06-05
- Inventor: Aswin Thiruvengadam
- Applicant: Aswin Thiruvengadam
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Berkeley Law & Technology Group, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Subject matter disclosed herein relates to techniques to read a memory cell that involve a threshold edge phenomenon of a reset state of phase change memory.
Public/Granted literature
- US20120075923A1 PHASE CHANGE MEMORY STATE DETERMINATION USING THRESHOLD EDGE DETECTION Public/Granted day:2012-03-29
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