Invention Grant
- Patent Title: Memory device and operating method
- Patent Title (中): 内存设备和操作方法
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Application No.: US12647583Application Date: 2009-12-28
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Publication No.: US08194449B2Publication Date: 2012-06-05
- Inventor: Ki Tae Park
- Applicant: Ki Tae Park
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0135452 20081229
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A method of operating a memory device includes; defining a plurality of read levels, using the plurality of read levels to determine electrical property differences between first and second memory cells adjacent dispose along a common word line, and determining read data stored in the first and second memory cells in relation to the determination of electrical property differences between the first and second memory cells.
Public/Granted literature
- US20100165731A1 MEMORY DEVICE AND OPERATING METHOD Public/Granted day:2010-07-01
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