Invention Grant
- Patent Title: Charge pump operation in a non-volatile memory device
- Patent Title (中): 在非易失性存储设备中对泵进行充电操作
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Application No.: US13186766Application Date: 2011-07-20
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Publication No.: US08194466B2Publication Date: 2012-06-05
- Inventor: Chang Wan Ha
- Applicant: Chang Wan Ha
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A charge pump in a memory device is activated to produce a programming voltage prior to data loading during a programming operation. During an initial programming cycle, first and second load voltages are charged from the charge pump. The first load is removed from the charge pump during a verify operation. The first load voltage is subsequently recharged by charge sharing from the second load voltage so that the charge pump is not initially necessary for recharging the first load voltage.
Public/Granted literature
- US20110280078A1 CHARGE PUMP OPERATION IN A NON-VOLATILE MEMORY DEVICE Public/Granted day:2011-11-17
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