Invention Grant
- Patent Title: Methods of forming flash device with shared word lines
- Patent Title (中): 用共享字线形成闪存设备的方法
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Application No.: US12641113Application Date: 2009-12-17
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Publication No.: US08194470B2Publication Date: 2012-06-05
- Inventor: Masaaki Higashitani
- Applicant: Masaaki Higashitani
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C16/04
Abstract:
Word lines of a NAND flash memory array are formed by concentric, rectangular shaped, closed loops that have a width of approximately half the minimum feature size of the patterning process used. The resulting circuits have word lines linked together so that peripheral circuits are shared. Separate erase blocks are established by shield plates.
Public/Granted literature
- US20100091569A1 METHODS OF FORMING FLASH DEVICE WITH SHARED WORD LINES Public/Granted day:2010-04-15
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