Invention Grant
- Patent Title: Capacitive divider sensing of memory cells
- Patent Title (中): 存储器单元的电容分压器感测
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Application No.: US12770362Application Date: 2010-04-29
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Publication No.: US08194475B2Publication Date: 2012-06-05
- Inventor: Jennifer E. Taylor , John D. Porter
- Applicant: Jennifer E. Taylor , John D. Porter
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.
Public/Granted literature
- US20100214821A1 CAPACITIVE DIVIDER SENSING OF MEMORY CELLS Public/Granted day:2010-08-26
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