Invention Grant
US08194478B2 Systems and methods for writing to multiple port memory circuits
有权
用于写入多个端口存储器电路的系统和方法
- Patent Title: Systems and methods for writing to multiple port memory circuits
- Patent Title (中): 用于写入多个端口存储器电路的系统和方法
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Application No.: US12699933Application Date: 2010-02-04
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Publication No.: US08194478B2Publication Date: 2012-06-05
- Inventor: Haining Yang , Zhongze Wang , ChangHo Jung
- Applicant: Haining Yang , Zhongze Wang , ChangHo Jung
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A multiple-port RAM circuit has a data-in line coupled to multiple bit lines and multiple bit line bars. The circuit also has multiple word lines. A memory cell is coupled to the bit lines, bit line bars, and word lines. The circuit further includes a controller than enables the word lines to substantially simultaneously write a value from the bit lines to the memory cell.
Public/Granted literature
- US20110188328A1 Systems and Methods for Writing to Multiple Port Memory Circuits Public/Granted day:2011-08-04
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