Invention Grant
- Patent Title: Method for initializing memory device
- Patent Title (中): 初始化存储器件的方法
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Application No.: US12622063Application Date: 2009-11-19
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Publication No.: US08194480B2Publication Date: 2012-06-05
- Inventor: Cheng-Che Tsai , Pu-Jen Cheng
- Applicant: Cheng-Che Tsai , Pu-Jen Cheng
- Applicant Address: TW Tainan
- Assignee: Himax Technologies Limited
- Current Assignee: Himax Technologies Limited
- Current Assignee Address: TW Tainan
- Agency: J.C. Patents
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/18

Abstract:
A method for initializing a memory device is provided. The method includes a step for transmitting at least N+1 clock cycles to the memory device, wherein the N is an amount of bits of output serial data of the memory device. During a clock cycle of the at least N+1 clock cycles, a first start/stop signal is transmitted to the memory device. During another clock cycle of the at least N+1 clock cycles, a second start/stop signal is transmitted to the memory device.
Public/Granted literature
- US20110116331A1 METHOD FOR INITIALIZING MEMORY DEVICE Public/Granted day:2011-05-19
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