Invention Grant
- Patent Title: Semiconductor laser with heater
- Patent Title (中): 半导体激光加热器
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Application No.: US12571846Application Date: 2009-10-01
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Publication No.: US08194710B2Publication Date: 2012-06-05
- Inventor: Tsutomu Ishikawa
- Applicant: Tsutomu Ishikawa
- Applicant Address: JP Yamanashi
- Assignee: Eudyna Devices Inc.
- Current Assignee: Eudyna Devices Inc.
- Current Assignee Address: JP Yamanashi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-095317 20060330; JP2007-075651 20070322
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer.
Public/Granted literature
- US20100040101A1 Optical Semiconductor Device Public/Granted day:2010-02-18
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