Invention Grant
US08196071B2 Creating mask data of integrated circuit patterns using calculated etching conversion difference
失效
使用计算出的蚀刻转换差异创建集成电路图案的掩模数据
- Patent Title: Creating mask data of integrated circuit patterns using calculated etching conversion difference
- Patent Title (中): 使用计算出的蚀刻转换差异创建集成电路图案的掩模数据
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Application No.: US12688644Application Date: 2010-01-15
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Publication No.: US08196071B2Publication Date: 2012-06-05
- Inventor: Hiromitsu Mashita , Katsumi Iyanagi , Takafumi Taguchi , Toshiya Kotani , Hidefumi Mukai , Taiga Uno , Takashi Nakazawa
- Applicant: Hiromitsu Mashita , Katsumi Iyanagi , Takafumi Taguchi , Toshiya Kotani , Hidefumi Mukai , Taiga Uno , Takashi Nakazawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-008135 20090116
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A pattern data creating method comprising: referring to a first correspondence relation between an amount of dimension variation between a first pattern formed on a substrate and a second pattern formed by processing the substrate using the first pattern and either one of a pattern total surface area and a pattern boundary length of the first pattern; and creating pattern data for forming the first pattern.
Public/Granted literature
- US20100185313A1 PATTERN DATA CREATING METHOD, COMPUTER PROGRAM PRODUCT, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-07-22
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