Invention Grant
- Patent Title: Method for cleaning elements in vacuum chamber and apparatus for processing substrates
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Application No.: US12131803Application Date: 2008-06-02
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Publication No.: US08206513B2Publication Date: 2012-06-26
- Inventor: Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
- Applicant: Tsuyoshi Moriya , Hiroshi Nagaike , Hiroyuki Nakayama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-300427 20030825; JP2004-218939 20040727
- Main IPC: B08B5/00
- IPC: B08B5/00 ; B08B7/00

Abstract:
To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
Public/Granted literature
- US20080245387A1 METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES Public/Granted day:2008-10-09
Information query
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