Invention Grant
- Patent Title: Phase change memory materials
- Patent Title (中): 相变记忆材料
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Application No.: US12503156Application Date: 2009-07-15
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Publication No.: US08206804B2Publication Date: 2012-06-26
- Inventor: Bruce Gardiner Aitken , Charlene Marie Smith
- Applicant: Bruce Gardiner Aitken , Charlene Marie Smith
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Tina N. Thompson
- Main IPC: B32B3/02
- IPC: B32B3/02
Abstract:
Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described.
Public/Granted literature
- US20100055493A1 Phase Change Memory Materials Public/Granted day:2010-03-04
Information query
