Invention Grant
- Patent Title: Method for forming pattern and method for manufacturing semiconductor device
- Patent Title (中): 形成图案的方法和制造半导体器件的方法
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Application No.: US12179198Application Date: 2008-07-24
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Publication No.: US08206895B2Publication Date: 2012-06-26
- Inventor: Ikuo Yoneda , Shunko Magoshi
- Applicant: Ikuo Yoneda , Shunko Magoshi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: G03F7/207
- IPC: G03F7/207

Abstract:
According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.
Public/Granted literature
- US20100021848A1 METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-01-28
Information query
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