Invention Grant
US08207007B2 Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
有权
半导体装置的制造方法，固态成像装置，电气装置的制造方法以及电气装置
- Patent Title: Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
- Patent Title (中): 半导体装置的制造方法，固态成像装置，电气装置的制造方法以及电气装置
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Application No.: US12222855Application Date: 2008-08-18
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Publication No.: US08207007B2Publication Date: 2012-06-26
- Inventor: Yasufumi Miyoshi
- Applicant: Yasufumi Miyoshi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2007-223114 20070829
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
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Information query
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