Invention Grant
- Patent Title: Laser mask and crystallization method using the same
- Patent Title (中): 激光掩模和结晶法使用相同
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Application No.: US13050789Application Date: 2011-03-17
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Publication No.: US08207050B2Publication Date: 2012-06-26
- Inventor: JaeSung You
- Applicant: JaeSung You
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna, Long, and Aldridge, LLP.
- Priority: KR2003-99390 20031229
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.
Public/Granted literature
- US20110171769A1 LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME Public/Granted day:2011-07-14
Information query
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