Invention Grant
US08207056B2 Method for manufacturing semiconductor device, and method and structure for implementing semiconductor device
有权
制造半导体器件的方法，以及用于实现半导体器件的方法和结构
- Patent Title: Method for manufacturing semiconductor device, and method and structure for implementing semiconductor device
- Patent Title (中): 制造半导体器件的方法，以及用于实现半导体器件的方法和结构
-
Application No.: US12552728Application Date: 2009-09-02
-
Publication No.: US08207056B2Publication Date: 2012-06-26
- Inventor: Shuichi Tanaka
- Applicant: Shuichi Tanaka
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-084583 20050323; JP2005-084584 20050323; JP2005-344647 20051129
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00
Abstract:
A method for manufacturing a semiconductor device includes forming an electrode; forming a projection projecting with respect to the electrode by melting a resin; and providing a conductive layer electrically connected to the electrode. The conductive layer is extended to an upper surface of the projection. Therefore, productivity of the semiconductor is improved.
Public/Granted literature
Information query
IPC分类:
