Invention Grant
US08207058B1 Electron beam induced deposition of interface to carbon nanotube 失效
电子束诱导与碳纳米管的界面沉积

Electron beam induced deposition of interface to carbon nanotube
Abstract:
A system and method are provided for fabricating a low electric resistance ohmic contact, or interface, between a Carbon Nanotube (CNT) and a desired node on a substrate. In one embodiment, the CNT is a Multiwalled, or Multiwall, Carbon Nanotube (MWCNT), and the interface provides a low electric resistance ohmic contact between all conduction shells, or at least a majority of conduction shells, of the MWCNT and the desired node on the substrate. In one embodiment, a Focused Electron Beam Chemical Vapor Deposition (FEB-CVD) process is used to deposit an interface material near an exposed end of the MWCNT in such a manner that surface diffusion of precursor molecules used in the FEB-CVD process induces lateral spread of the deposited interface material into the exposed end of the MWCNT, thereby providing a contact to all conduction shells, or at least a majority of the conduction shells, of the MWCNT.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06,H01L21/16及H01L21/18各组不包含的或有或无杂质,例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/44)
H01L21/461 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积,例如绝缘层上的导电层、电阻层;这些层的后处理(电极的制造入H01L21/28)
Patent Agency Ranking
0/0