Semiconductor device manufacturing method using valve metal and nitride of valve metal

Invention Grant

US08207061B2 Semiconductor device manufacturing method using valve metal and nitride of valve metal 有权

Title translation: 使用阀门金属和阀门金属氮化物的半导体器件制造方法

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Patent Title: Semiconductor device manufacturing method using valve metal and nitride of valve metal
Patent Title (中): 使用阀门金属和阀门金属氮化物的半导体器件制造方法
Application No.: US12374097

Application Date: 2007-06-15
Publication No.: US08207061B2

Publication Date: 2012-06-26
Inventor: Yasuhiko Kojima , Taro Ikeda
Applicant: Yasuhiko Kojima , Taro Ikeda
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2006-197662 20060720
International Application: PCT/JP2007/062136 WO 20070615
International Announcement: WO2008/010370 WO 20080124
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device manufacturing method using valve metal and nitride of valve metal

Abstract:

Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film 11) which absorbed water from the atmosphere, and a substrate (wafer W) having a trench 100 formed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film 13) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation film 13a is formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper film 15 is formed on the surface of the second base film by CVD by using a copper organic compound as a material.

Abstract(Chinese):

本发明提供一种对铜膜及其基膜具有优异的粘附性并且在布线之间具有小的电阻的半导体器件。半导体器件包括从大气吸收水的多孔绝缘层（SIOC膜11），并且在该绝缘膜上形成具有形成在该绝缘膜上的沟槽100的衬底（晶片W）放置在处理室中。基板涂覆有由阀金属制成的第一基膜（Ti膜13）。与绝缘膜接触的第一膜的表面被从绝缘层排出的水氧化，形成钝化膜13a。第一基膜的表面涂覆有由金属的氮化物或碳化物制成的第二基膜，并且通过使用铜有机化合物作为材料通过CVD在第二基膜的表面上形成铜膜15 。

Public/Granted literature

US20090321936A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM Public/Granted day:2009-12-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）