Method for improving adhesion of low resistivity tungsten/tungsten nitride layers

Invention Grant

US08207062B2 Method for improving adhesion of low resistivity tungsten/tungsten nitride layers 有权

Title translation: 改善低电阻率钨/氮化钨层附着力的方法

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Patent Title: Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
Patent Title (中): 改善低电阻率钨/氮化钨层附着力的方法
Application No.: US12556490

Application Date: 2009-09-09
Publication No.: US08207062B2

Publication Date: 2012-06-26
Inventor: Juwen Gao , Wei Lei , Michal Danek , Erich Klawuhn , Sean Chang , Ron Powell
Applicant: Juwen Gao , Wei Lei , Michal Danek , Erich Klawuhn , Sean Chang , Ron Powell
Applicant Address: US CA San Jose
Assignee: Novellus Systems, Inc.
Current Assignee: Novellus Systems, Inc.
Current Assignee Address: US CA San Jose
Agency: Weaver Austin Villeneuve & Sampson LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for improving adhesion of low resistivity tungsten/tungsten nitride layers

Abstract:

Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions.

Abstract(Chinese):

提供了改善低电阻率钨/氮化钨层的附着力的方法。通过在沉积低电阻率钨之前处理钨或氮化钨层来形成具有良好粘附性的低电阻率钨/氮化钨层。处理包括等离子体处理和温度处理。根据各种实施方案，处理方法涉及不同的气体气氛和等离子体条件。

Public/Granted literature

US20110059608A1 METHOD FOR IMPROVING ADHESION OF LOW RESISTIVITY TUNGSTEN/TUNGSTEN NITRIDE LAYERS Public/Granted day:2011-03-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）