Invention Grant
- Patent Title: Method for forming a shallow trench isolation
- Patent Title (中): 形成浅沟槽隔离的方法
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Application No.: US11968621Application Date: 2008-01-02
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Publication No.: US08207065B2Publication Date: 2012-06-26
- Inventor: Chien-Mao Liao , Shing-Yih Shih
- Applicant: Chien-Mao Liao , Shing-Yih Shih
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Priority: TW96126909A 20070724
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
A method for forming a shallow trench isolation includes providing a substrate with a trench, a first liner layer and a second liner layer sequentially in the trench with a first oxide filling the trench, performing a first wet etching to remove part of the first oxide and part of the first liner layer to expose the substrate, performing a second wet etching to remove part of the second liner layer so that the second liner layer is lower than surface of the substrate, performing a third wet etching to remove part of the first oxide and part of the first liner layer, and filling the trench with a second oxide to form a shallow trench isolation.
Public/Granted literature
- US20090029556A1 METHOD FOR FORMING A SHALLOW TRENCH ISOLATION Public/Granted day:2009-01-29
Information query
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