Invention Grant
- Patent Title: Dry etching method
- Patent Title (中): 干蚀刻法
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Application No.: US12512094Application Date: 2009-07-30
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Publication No.: US08207066B2Publication Date: 2012-06-26
- Inventor: Yoshiharu Inoue , Hiroaki Ishimura , Hitoshi Kobayashi , Masunori Ishihara , Toru Ito , Toshiaki Nishida
- Applicant: Yoshiharu Inoue , Hiroaki Ishimura , Hitoshi Kobayashi , Masunori Ishihara , Toru Ito , Toshiaki Nishida
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-089103 20090401
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/302 ; H01L21/461
Abstract:
The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.
Public/Granted literature
- US20100255612A1 DRY ETCHING METHOD Public/Granted day:2010-10-07
Information query
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