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US08207485B2 Pixel structure having shielded storage node 有权
具有屏蔽存储节点的像素结构

Pixel structure having shielded storage node
Abstract:
A pixel structure having a shielded storage node. A pixel comprises a sample transistor coupled to a light detecting stage. The sample transistor comprises an inner junction region surrounding and coupled to a storage node and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node. A memory capacitor is coupled to the storage node.
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