Invention Grant
- Patent Title: Pixel structure having shielded storage node
- Patent Title (中): 具有屏蔽存储节点的像素结构
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Application No.: US12474150Application Date: 2009-05-28
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Publication No.: US08207485B2Publication Date: 2012-06-26
- Inventor: Gerald LePage
- Applicant: Gerald LePage
- Applicant Address: BE Mechelen
- Assignee: On Semiconductor Image Sensor
- Current Assignee: On Semiconductor Image Sensor
- Current Assignee Address: BE Mechelen
- Agent Rennie William Dover
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/146

Abstract:
A pixel structure having a shielded storage node. A pixel comprises a sample transistor coupled to a light detecting stage. The sample transistor comprises an inner junction region surrounding and coupled to a storage node and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node. A memory capacitor is coupled to the storage node.
Public/Granted literature
- US20090230289A1 Pixel Structure Having Shielded Storage Node Public/Granted day:2009-09-17
Information query
IPC分类: