Invention Grant
- Patent Title: Oxide semiconductor and thin film transistor including the same
- Patent Title (中): 包括其的氧化物半导体和薄膜晶体管
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Application No.: US12654343Application Date: 2009-12-17
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Publication No.: US08207530B2Publication Date: 2012-06-26
- Inventor: Sang-wook Kim , Sung-ho Park , Chang-jung Kim , Sun-il Kim
- Applicant: Sang-wook Kim , Sung-ho Park , Chang-jung Kim , Sun-il Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0001942 20090109
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12
Abstract:
Provided are an oxide semiconductor and a thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of indium (In) oxide and hafnium (Hf) and may be a channel material of the thin film transistor.
Public/Granted literature
- US20100176393A1 Oxide semiconductor and thin film transistor including the same Public/Granted day:2010-07-15
Information query
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