Invention Grant
- Patent Title: Thin film transistor substrate and fabricating method thereof
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US12879949Application Date: 2010-09-10
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Publication No.: US08207535B2Publication Date: 2012-06-26
- Inventor: Hyun-Ho Kim
- Applicant: Hyun-Ho Kim
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2006-0137120 20061228
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L21/84 ; G02F1/1335

Abstract:
The present invention relates to a thin film transistor substrate. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate which reduces the time required in the process and enhance the productivity.
Public/Granted literature
- US20100327283A1 THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF Public/Granted day:2010-12-30
Information query
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