Invention Grant
US08207535B2 Thin film transistor substrate and fabricating method thereof 有权
薄膜晶体管基板及其制造方法

Thin film transistor substrate and fabricating method thereof
Abstract:
The present invention relates to a thin film transistor substrate. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate which reduces the time required in the process and enhance the productivity.
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