In accordance with an aspect of the invention, A Schottky junction field effect transistor (JFET) is created using cobalt silicide, or other Schottky material, to form the gate contact of the JFET. The structural concepts can also be applied to a standard JFET that uses N− type or P− type dopants to form the gate of the JFET. In addition, the structures allow for an improved JFET linkup with buried linkup contacts allowing improved noise and reliability performance for both conventional diffusion (N− and P− channel) JFET structures and for Schottky JFET structures. In accordance with another aspect of the invention, the gate poly, as found in a standard CMOS or BiCMOS process flow, is used to perform the linkup between the source and the junction gate and/or between the drain and the junction gate of a junction filed effect transistor (JFET). Use of a bias on the gate linkup of the JFET allows an additional tuning knob for the JFET that can be optimized to trade off breakdown characteristics with reduced on resistance. In accordance with yet another aspect of the invention, a patterned buried layer is used to form the back gate control for a junction field effect transistor (JFET). The structure allows a layout or buried layer pattern change to adjust the pinch-off voltage of the JFET structure. Vertical and lateral diffusion of the buried layer is used to adjust the JFET operating parameters with a simple change in the buried layer patterns. In addition, the structures allow for increased breakdown voltage by leveraging charge sharing concepts and improving channel confinement for power JFET structures. These concepts can also be applied to both N− channel and P− channel diffusion JFETs and to Schottky JFET structures.