Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12623281Application Date: 2009-11-20
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Publication No.: US08207565B2Publication Date: 2012-06-26
- Inventor: Koichi Sato
- Applicant: Koichi Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-156585 20090701
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A semiconductor device includes: a stacked body including a conductive layer and an insulating layer alternately stacked on a base body; a pair of wall portions formed on the base body with a height equivalent to or larger than a thickness of the stacked body and opposed with a spacing wider than a thickness for one layer of the conductive layer; a contact layer interposed between the wall portions and connected to the conductive layer in the stacked body through an open end between the wall portions; and a contact electrode provided on the contact layer and connected to the contact layer.
Public/Granted literature
- US20110001182A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-01-06
Information query
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