Invention Grant
US08207565B2 Semiconductor device and method for manufacturing same 有权
半导体装置及其制造方法

Semiconductor device and method for manufacturing same
Abstract:
A semiconductor device includes: a stacked body including a conductive layer and an insulating layer alternately stacked on a base body; a pair of wall portions formed on the base body with a height equivalent to or larger than a thickness of the stacked body and opposed with a spacing wider than a thickness for one layer of the conductive layer; a contact layer interposed between the wall portions and connected to the conductive layer in the stacked body through an open end between the wall portions; and a contact electrode provided on the contact layer and connected to the contact layer.
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