Capacitive structures in integrated circuits are disclosed. The capacitive structures are formed on a substrate. Each capacitive structure includes a first conductive finger and a second conductive finger. The first and second conductive fingers are arranged in parallel with each other and separated from each other by a dielectric material. The first finger is connected to a first interconnect and the second conductive finger is connected to a second interconnect. A first capacitor is formed from a first group of the plurality of capacitive structures having respective interconnects coupled together. A second capacitor is formed from a second group of the plurality of capacitive structures having respective interconnects coupled together. The capacitive structures of the first group are intertwined with the capacitive structures of the second group.