Invention Grant
US08207571B2 Non-volatile memory device with a threshold voltage change rate controlled by gate oxide phase
有权
具有由栅极氧化物相控制的阈值电压变化率的非易失性存储器件
- Patent Title: Non-volatile memory device with a threshold voltage change rate controlled by gate oxide phase
- Patent Title (中): 具有由栅极氧化物相控制的阈值电压变化率的非易失性存储器件
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Application No.: US13032836Application Date: 2011-02-23
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Publication No.: US08207571B2Publication Date: 2012-06-26
- Inventor: Sheng-Chih Lai , Hang-Ting Lue
- Applicant: Sheng-Chih Lai , Hang-Ting Lue
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW95136772A 20061003
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.
Public/Granted literature
- US20110140193A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-16
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