Invention Grant
US08207579B2 Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
有权
具有具有变化的导通/截止阈值电压的双扩散MOS晶体管的半导体器件及其制造方法
- Patent Title: Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
- Patent Title (中): 具有具有变化的导通/截止阈值电压的双扩散MOS晶体管的半导体器件及其制造方法
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Application No.: US12656137Application Date: 2010-01-19
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Publication No.: US08207579B2Publication Date: 2012-06-26
- Inventor: Shinobu Takehiro
- Applicant: Shinobu Takehiro
- Applicant Address: JP Tokyo
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-008687 20090119
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.
Public/Granted literature
- US20100181616A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-07-22
Information query
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