A semiconductor device including an intermediate insulating film formed over a plurality of first conductors over a semiconductor substrate. Contact holes are formed in the intermediate insulating film over the first conductors, and contact plugs are buried in the contact holes, respectively. A plurality of second conductors are formed over the plurality of contact plugs on the intermediate insulating film, respectively, and are electrically connected to the plurality of first conductors via the contact plugs. In certain regions of the semiconductor device, the contact plugs may terminate within the intermediate insulating film, thereby electrically insulating the second conductors from the first conductors.