Invention Grant
- Patent Title: Methods for forming arrays of small, closely spaced features
- Patent Title (中): 用于形成小的,紧密间隔的特征的阵列的方法
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Application No.: US12186018Application Date: 2008-08-05
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Publication No.: US08207614B2Publication Date: 2012-06-26
- Inventor: Mirzafer Abatchev , Gurtej Sandhu
- Applicant: Mirzafer Abatchev , Gurtej Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer.
Public/Granted literature
- US20080290527A1 METHODS FOR FORMING ARRAYS OF SMALL, CLOSELY SPACED FEATURES Public/Granted day:2008-11-27
Information query
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