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US08207614B2 Methods for forming arrays of small, closely spaced features 有权
用于形成小的,紧密间隔的特征的阵列的方法

Methods for forming arrays of small, closely spaced features
Abstract:
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer.
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