Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12692872Application Date: 2010-01-25
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Publication No.: US08207618B2Publication Date: 2012-06-26
- Inventor: Kazumichi Shimizu , Yoshihiro Tomura , Masahiro Ono
- Applicant: Kazumichi Shimizu , Yoshihiro Tomura , Masahiro Ono
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2009-017413 20090129
- Main IPC: H01L23/28
- IPC: H01L23/28

Abstract:
This semiconductor device is a semiconductor device in which a semiconductor element is flip-chip mounted onto a circuit substrate and the semiconductor element is covered and sealed with a sealing resin. A recess portion is formed in the sealing resin on a surface opposite to the mounting surface of the semiconductor element. Warping of the semiconductor device is reduced by the action of this recess portion.
Public/Granted literature
- US20100187675A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-29
Information query
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