Invention Grant
- Patent Title: Low leakage power detection circuit
- Patent Title (中): 低漏电功率检测电路
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Application No.: US13027419Application Date: 2011-02-15
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Publication No.: US08207755B1Publication Date: 2012-06-26
- Inventor: Wen-Han Wang
- Applicant: Wen-Han Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A leakage current reduction circuit comprising a transmission gate, a feedback channel and a controller is placed between a first device supplied with a first voltage potential and a second device supplied with a second voltage potential. The voltage potential mismatch between the first device and the second device may cause a leakage current flowing through the input stage of the second device. By employing the low leakage power detection circuit, a logic high state generated from the first device can be converted into a logic high state having an amplitude approximately equal to the second voltage potential.
Information query
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