Invention Grant
US08207757B1 Nonvolatile CMOS-compatible logic circuits and related operating methods
有权
非易失性CMOS兼容逻辑电路及相关操作方法
- Patent Title: Nonvolatile CMOS-compatible logic circuits and related operating methods
- Patent Title (中): 非易失性CMOS兼容逻辑电路及相关操作方法
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Application No.: US13022231Application Date: 2011-02-07
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Publication No.: US08207757B1Publication Date: 2012-06-26
- Inventor: An Chen , Zoran Krivokapic
- Applicant: An Chen , Zoran Krivokapic
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H03K19/20
- IPC: H03K19/20

Abstract:
Apparatus and related fabrication and operating methods are provided for logic circuits that include ferromagnetic elements. An exemplary logic circuit includes a first ferromagnetic element having a first ferromagnetic layer, a second ferromagnetic element having a second ferromagnetic layer, and a transistor coupled to the first ferromagnetic element. The first transistor is configured to allow current to flow through the first ferromagnetic element. The current influences the magnetization direction of the first ferromagnetic layer, which, in turn, influences the magnetization direction of the second ferromagnetic layer.
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