Invention Grant
- Patent Title: Method and apparatus switching a semiconductor switch with a multi-stage drive circuit
- Patent Title (中): 用多级驱动电路切换半导体开关的方法和装置
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Application No.: US11433256Application Date: 2006-05-12
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Publication No.: US08207760B2Publication Date: 2012-06-26
- Inventor: Giao Minh Pham
- Applicant: Giao Minh Pham
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A method and an apparatus for implementing a semiconductor switch multi-stage drive circuit. The disclosed method and an apparatus reduce losses in a semiconductor switch when it is turned from an off state to an on state or from an on state to an off state. The reduction in losses is achieved without influencing the dv/dt across the semiconductor switch during a first time period while the semiconductor switch is switching. This reduction in losses is therefore achieved with very little increase in the noise generated due to rapid dv/dt during the first time period when the semiconductor switch is switching. The configuration of the circuitry to achieve this reduction in switching losses is such that benefits are less sensitive to manufacturing tolerances and temperature effects than alternative semiconductor switch drive schemes to achieve similar results.
Public/Granted literature
- US20060261878A1 Method and apparatus switching a semiconductor switch with a multi-stage drive circuit Public/Granted day:2006-11-23
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