Invention Grant
- Patent Title: High frequency power amplifier
- Patent Title (中): 高频功率放大器
-
Application No.: US13033717Application Date: 2011-02-24
-
Publication No.: US08207790B2Publication Date: 2012-06-26
- Inventor: Tomoyuki Asada , Takao Haruna , Jun Takaso
- Applicant: Tomoyuki Asada , Takao Haruna , Jun Takaso
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd
- Priority: JP2010-101027 20100426
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F3/191

Abstract:
A high frequency power amplifier includes first and second transistors connected in parallel and amplifying a high frequency signal; a first switch connected to outputs of the first and second transistors and which connects an input terminal selectively to first and second output terminals; a third transistor amplifying a signal output from the first output terminal of the first switch; and a second switch having a first input terminal connected to the third transistor, a second input terminal connected to the second output terminal of the first switch, and which selectively connects the first and the second input terminals to an output terminal of the second switch.
Public/Granted literature
- US20110260794A1 HIGH FREQUENCY POWER AMPLIFIER Public/Granted day:2011-10-27
Information query