Invention Grant
US08208277B2 Memory modules and memory devices having memory device stacks, and method of forming same
有权
具有存储器件堆叠的存储器模块和存储器件及其形成方法
- Patent Title: Memory modules and memory devices having memory device stacks, and method of forming same
- Patent Title (中): 具有存储器件堆叠的存储器模块和存储器件及其形成方法
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Application No.: US12870409Application Date: 2010-08-27
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Publication No.: US08208277B2Publication Date: 2012-06-26
- Inventor: Joseph Hofstra
- Applicant: Joseph Hofstra
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Traskbritt
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A memory module, system and method of forming the same includes a memory module including a plurality of memory devices having a first portion of memory devices cooperatively forming a first rank of memory devices and a second portion of memory devices cooperatively forming a second rank of memory devices. The first and second portions of memory devices are grouped into a plurality of memory device stacks, wherein each of the plurality of memory device stacks includes at least one of the plurality of memory devices coupled to a first portion of a plurality of DQ signals and at least another one of the plurality of memory devices coupled to a different second portion of the plurality of DQ signals.
Public/Granted literature
- US20100321973A1 MEMORY MODULE, SYSTEM AND METHOD OF MAKING SAME Public/Granted day:2010-12-23
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