Invention Grant
US08208277B2 Memory modules and memory devices having memory device stacks, and method of forming same 有权
具有存储器件堆叠的存储器模块和存储器件及其形成方法

  • Patent Title: Memory modules and memory devices having memory device stacks, and method of forming same
  • Patent Title (中): 具有存储器件堆叠的存储器模块和存储器件及其形成方法
  • Application No.: US12870409
    Application Date: 2010-08-27
  • Publication No.: US08208277B2
    Publication Date: 2012-06-26
  • Inventor: Joseph Hofstra
  • Applicant: Joseph Hofstra
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Traskbritt
  • Main IPC: G11C5/02
  • IPC: G11C5/02
Memory modules and memory devices having memory device stacks, and method of forming same
Abstract:
A memory module, system and method of forming the same includes a memory module including a plurality of memory devices having a first portion of memory devices cooperatively forming a first rank of memory devices and a second portion of memory devices cooperatively forming a second rank of memory devices. The first and second portions of memory devices are grouped into a plurality of memory device stacks, wherein each of the plurality of memory device stacks includes at least one of the plurality of memory devices coupled to a first portion of a plurality of DQ signals and at least another one of the plurality of memory devices coupled to a different second portion of the plurality of DQ signals.
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